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| features e g n-channel c = !" # $%&' ( )* ( $%&'+ ,- .,/ + + (*+ ) $ * ' +"012 * )* ($%&' *() ,- .,/ $%&'3 45(* 6 )) 7/+89:;;1 to-247ac ! " # $ %& # ' ( ) #* (+, ) - . / " +, " ( $ 0 " +, " ( $ 0 1$ 2 3 4 $ 5 4 $ 67 - 8*0-*8*0 97 9 + : 60 - +- * ;7<8*=< 9 > 5 2 . ??? ??? *@@ 5 2 ( ??? ??? *@ a> 5 467 6 7 ??? *! ??? 5 2 ' ; 6 b$ ??? ??? ! > >c ??? 08*9 ??? 8d9 www.irf.com 1 <+ 2 www.irf.com e . c 8 9 f #0 - ' e . c 8 9 f - ! 4)*# e . c 8 9 f g !! 1(b f !0 f 5 f - f '6 # 177(b f g@ 65 ) f ! -0 b h h 14 c& f *# f % % b* 1774 c& f *g- f 2 4)*g66# 4 c& f -*@- !*0 1(b f ! f 6 4)*6# 5 f - f '6 # 177(b f ! f 65 ) f f b h h 4 c& f @*! f 2 % % b* & f - f i + 7 $ $ $ f # f 1 $ $ f f $) - 4) *@ 5% 7 $ f # f j *+id (5% 5% b f 0- g 4)* f 0 0 ! #*' ("5% 5% b f !* #* ' 4)* f 0* e (5% 5% bc f ! -# 4 )* f -- ## 0 a 'ak a ("5 7)75% b f -- f 'ak 4 )* ( f# f @ ! "#$ f f 6 k' $ 77* 7 f *!- f a 6 * ' 4 f *!- -* ' f *g@ f !' 4)*6 f *!@ f '6 . c c -* f 0* 6 k' a $ 77*7c c f f a 6 k' ) 0 ! f 4 6 ' l . f f k' 6 f f 6 6 () ( $ f *0 -*- #*' 4)*- f *! -* #*'6 . & f f / ' / % ! "#$ www.irf.com 3 ! =<2>$ ? " # $# 1 10 100 5 6 7 8 9 10 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5 s pulse width cc t = 25 c j o t = 150 c j o 0.1 1 10 100 0 5 10 15 20 25 f, frequency (khz) load current (a) for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j power dissipation = w 60% of rated voltage i ideal diodes square wave: 1 10 100 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20 s pulse width ge t = 25 c j o t = 150 c j o 4 www.irf.com %&''($$ #' ') (' * ) ' %&'' ' -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 4.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 10.5 c i = a 21 c i = a 42 c 25 50 75 100 125 150 0 10 20 30 40 50 t , case temperature ( c) maximum dc collector current(a) c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) www.irf.com 5 0 10 20 30 40 50 3.0 3.5 4.0 4.5 5.0 r , gate resistance (ohm) total switching losses (mj) g v = 800v v = 15v t = 25 c i = 21a cc ge j c (' * + #* + (' * ,- #* + . ,- #* ) ' 0 20 40 60 80 100 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 21a cc c 1 10 100 0 1000 2000 3000 4000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 5 6. 5 8 ) -60 -40 -20 0 20 40 60 80 100 120 140 160 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 800v g ge cc i = a 42 c i = a 21 c i = a 10.5 c 6 www.irf.com 1 10 100 1000 1 10 100 1000 10000 v = 20v t = 125 c ge j o v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c safe operating area "$$," %&'' - */ - ,- #* (' 1 10 100 0246810 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j 0 10 20 30 40 50 0 4 8 12 16 i , collector-to-emitter current (a) total switching losses (mj) c r = ohm t = 150 c v = 800v v = 15v g j cc ge www.irf.com 7 . . 0 . 0 , #* 0 0 0 0 100 200 300 400 500 600 100 1000 f di /dt - (a/ s) rr q - (nc) i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c r j j 10 100 1000 100 1000 f di /dt - (a/ s) di(rec)m/dt - (a/ s) i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c r j j 0 40 80 120 160 200 100 1000 f di /dt - (a/ s) t - (ns) rr i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - (a/ s) i - (a) irrm i = 16a i = 8.0a i = 4.0a f f f v = 200v t = 125c t = 25c r j j 8 www.irf.com same type device as d.u.t. d.u.t. 430 f 80% of vce ' 25 $ , , @ $ t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5 s vce ic dt 90% vge +vge eoff = ' a( 2 4:; / , vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt ' a( 2 4:; /, ' a( 2 4:; /, @ $ www.irf.com 9 vg gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000 f 100v figure 19. figure 20. figure 18e. 10 www.irf.com notes : repetitive rating: v ge =20v; pulse width limited by maximum junction tem- perature (figure 20) v cc =80%(v ces ), v ge =20v, l=10 h, r g = 10 (figure 19) pulse width 80 s; duty factor 0.1%. pulse width 5.0 s, single shot. example: as sembled on ww 35, 2000 lot code 5657 wi t h as s e mb l y t his is an irfpe30 in t he as sembly line "h" 035h logo int ernat ional rect ifier irfpe30 lot code assembly 56 57 part number dat e code year 0 = 2000 we e k 35 line h note: "p" in assembly line position indicates "lead-free" / = ? data and specifications subject to change without notice. ir world headquarters: 10n.sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 05/2011 |
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